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Focused ion beam
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB setup uses a focused beam of ions instead. FIB can also be incorporated in a system with both electron and ion beam columns, allowing the same feature to be investigated using either of the beams. FIB should not be confused with using a beam of focused ions for direct write lithography (such as in proton beam writing). These are generally quite different systems where the material is modified by other mechanisms.
==Ion beam source==
Most widespread instruments are using liquid-metal ion sources (LMIS), especially gallium ion sources. Ion sources based on elemental gold and iridium are also available. In a gallium LMIS, gallium metal is placed in contact with a tungsten needle and heated gallium wets the tungsten and flows to the tip of the needle where the opposing forces of surface tension and electric field form the gallium into a cusp shaped tip called a Taylor cone. The tip radius of this cone is extremely small (~2 nm). The huge electric field at this small tip (greater than 1 x 108 volts per centimeter) causes ionization and field emission of the gallium atoms.
Source ions are then generally accelerated to an energy of 1–50 keV (kiloelectronvolts), and focused onto the sample by electrostatic lenses. LMIS produce high current density ion beams with very small energy spread. A modern FIB can deliver tens of nanoamperes of current to a sample, or can image the sample with a spot size on the order of a few nanometers.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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